m.yoon_FR.wps2À_0ÑÀ_0ÑmBIN‚¿<ÐÏࡱá>þÿ þÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿýÿÿÿþÿÿÿþÿÿÿ  þÿÿÿþÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿRoot Entryÿÿÿÿÿÿÿÿ²Z¤ žÑ¤ÀO¹2º 5CS\ÆCONTENTSÿÿÿÿ (CompObjÿÿÿÿÿÿÿÿÿÿÿÿVSPELLINGÿÿÿÿÿÿÿÿÿÿÿÿhþÿÿÿþÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿs of surfaces that have smaller roughness, and this finding fully supports the idea that the surprising stability of (105) facets on nanostructured silicon and silicon germanium surfaces is due to the strain on those surfaces. Quantitative analyses (in progress) will yield the precise measurements of the roughness and the nature of the roughness as a function of temperature and the relative strength of strain imposed. This particular role of strain on the stability of Si(105) facets has been widely suspected. However, the results of the present study constitute the first direct experimental confirmation and quantification of such suspicion. We expect to publish the results of this project in a leading physics journal. The facility where the x-ray experiments were performed is a national user facility operated under the US Department of Energy. Hundreds of users are present in any given day who have come from all around the country and the world with the common goal of utilizing x-ray light and ultraviolet light from the synchrotron source. On a good day, one might encounter a half dozen senior, leading scientists in one's research field who, otherwise, could only be met or heard in a very specialized international conference. Each group of users, however, occupies a separate experimental station (beamline) and performs independent experiments, which require hand-on expertise and creativity. Traveling to such a facility has been an outstanding opportunity for the graduate students for both scientific education and networking. that the strained surfaces have a flatter morphology than the unstrained surfaces, which are rougher. For the strained surfaces, the reflected and diffracted x-ray intensities fall off more slowly as a function of Qz, the component of momCHNKWKS (øÿÿÿÿTEXTTEXT$FDPPFDPPFDPCFDPC STSHSTSH"STSHSTSH"PSYIDSYIDn"SGP SGP ‚"INK INK †"BTEPPLC Š"BTECPLC ¢"FONTFONTº"(STRSPLC â":PRNTWNPR#FRAMFRAM7%ˆTITLTITL¿%4DOP DOP ó%V 3. Report for Previous Advance Incentive Fund An Advance Incentive Fund was awarded in 2004 for a project entitled "Synchrotron x-ray diffraction study of faceted semiconductor surfaces". The project set out to achieve two main goals. The first was a scientific goal to examine the role of strain in the stability of faceted silicon and silicon/germanium surfaces by means of synchrotron x-ray scattering. The second was an educational goal to train two female graduate students in a research area where women have been highly underrepresented, even by the standards of physics. This report summarizes the results of the project in light of the two goals. Three trips to an off-campus experimental site, the National Synchrotron Light Source, were sponsored by the Fund. Two were successfully completed in September and November of 2004, and the third is scheduled for March 2005. Although the complete set of data is still being analyzed, we are happy to report a finding that confirmed the prediction for the second experiment described in the proposal. X-ray reflectivity and diffraction were collected from Si(105) surfaces, some of which had been compressively strained, and some of which had not been strained while annealing at high temperatures, in the range of 700-950 °C. We have found that the strained surfaces have a flatter morphology than the unstrained surfaces, which are rougher. For the strained surfaces, the reflected and diffracted x-ray intensities fall off more slowly as a function of Qz, the component of momentum transfer perpendicular to the surface, than for the unstrained surfaces. Also, the lineshapes of the reflection and diffraction for the strained surfaces are much narrower than those for the unstrained surfaces. These are two signature characteristic `$ ° "$ìØ¸˜xXT,,(2‚"'(Š (* P.T . "ÏÊ "wƒ#"ÿÿÿ%ÿ4"‘Œ "h¾ "ˆ;#"ÿÿÿ%ÿ4"‘Œ ""á "º"#"ÿÿÿ%ÿ4"‘Œ "Î"PS#"ÿÿÿ%ÿ4"‘Œ"ðù#"ÿÿÿ%ÿ "pA#"ÿÿÿ%ÿ^`ê„"$0 Ö   Ò Ô ®°Ü$êàÂ਎tàtŽtDàt&tàt¨tà "ll"  Ž."0 "l"  Ž$Ѝ°¸À." "l"  Ž." "l"  ˜." "l"  „." "$è" "PØÿÿ." "  "æ" ." ¨2§ÿÿÿÿ<¨2§4( "ð$Š 08 "tt$$ ¨2§Arialÿ  " " "¤øÃìÈXX–(—,¸;Lexmark X74-X75䤜ŸX䤗¼Lexmark X74-X758䤗¼þÿö ä 䤗¼ÿÿþÿÿÿ#winspoolLexmark X74-X75USB001Fÿÿÿ"d5 " z™"HW"HQ"ð` "ð``""A."@ÿÿÿ"d5 "ˆ1"HW"HQ"ð` "ð``"."04-09-2006 04;36;28PM.wps"ÿª "ø|"Àv "Ô” stability of Si(105) facets has been widely suspected. However, the results of the present study constitute the first direct experimental confirmation and quantification of such suspicion. We expect to publish the results of this project in a leaþÿ ÿÿÿÿ²Z¤ žÑ¤ÀO¹2ºQuill96 Story Group Classÿÿÿÿô9²qy¹2ºy¹2º y¹2º¹2ºèy¹2ºê¹2ºYy¹2ºc¹2º…y¹2º“¹2º& y¹2º.